SI1056X-T1-GE3【PDF 1/8 页】MOSFET N-CH D-S 20V SC-89-6

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Sheet目录507

[1页]2页 3页 4页 5页

Si1056X

Vishay Siliconix

N-Channel 20 V (D-S) MOSFET

PRODUCT SUMMARY

FEATURES

V DS (V)

R DS(on) ( ? )

0.089 at V GS = 4.5 V

0.098 at V GS = 2.5 V

0.121 at V GS = 1.8 V

I D (A)

1.32

1.26

1.13

Q g (Typ.)

5.2

? Halogen-free According to IEC 61249-2-21

Definition

? TrenchFET ? Power MOSFET

? 100 % R g Tested

? Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

? Load Switch for Portable Devices

SC-89 (6-LEADS)

Marking Code

Lot Tracea b ility

and Date Code

Part # Code

Top V ie w

Orderin g Information: Si1056X-T1-GE3 (Lead (P b )-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwi se noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V DS

V GS

Limit

±8

Unit

Continuous Drain Current (T J = 150 °C) a

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

Continuous Source-Drain Diode Current

Maximum Power Dissipation a

Operating Junction and Storage Temperature Range

T A = 25 °C

T A = 70 °C

L = 0.1 mH

T A = 25 °C

T A = 70 °C

I D

I DM

I AS

E AS

I S

P D

T J , T stg

1.32 b, c

1.05 b, c

3.2

0.2 b, c

0.236 b, c

0.151 b, c

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient b, d

t ?? 5 s

Steady State

R thJA

440

540

530

650

°C/W

Notes:

a. Based on T C = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 650 °C/W.

Document Number: 73895

S10-2542-Rev. D, 08-Nov-10

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